SK Hynix introduced this week that it had began quantity manufacturing of its 238-layer TLC NAND reminiscence. The brand new gadget guarantees larger bit density and decrease NAND bits value for the producer and permits ultra-high-performance SSDs because it incorporates a very excessive interface pace of 2400 MT/s.
SK Hynix’s first 238-layer 3D TLC NAND gadget has a 512 Gb capability (64 GB). It has a number of advantages when in comparison with its 176-layer predecessor, together with a 34% larger manufacturing effectivity (i.e., smaller die measurement, decrease utilization of supplies, and costly course of steps, and so on.), a 21% decrease energy consumption throughout learn operations due to the ONFI 5.0 interface with the NV-LPDDR4 signaling methodology, and a 2400 MT/s interface switch charge, which is a 50% improve.
The latter is maybe probably the most essential benefit of the brand new reminiscence chip for PC lovers, as modern and upcoming shopper SSDs with a PCIe 5.0 x4 interface want high-speed reminiscence gadgets to saturate it. At present, accessible 3D NAND with a 1600 MT/s interface can solely allow drives with an roughly 10 GB/s sequential learn/write pace, however to get to 12.5 GB/s and even larger, one must both use high-speed reminiscence or use extra reminiscence gadgets and an acceptable controller.
SK Hynix’s 238-layer 3D TLC NAND makes use of string stacking to hitch a pair of 119-layer decks in addition to charge-trap, CMOS below Array (CuA) structure, which locations NAND logic below the 3D NAND reminiscence cells array to scale back die measurement and prices. Because of this SK Hynix calls this structure 4D NAND.
| SK hynix 3D TLC NAND Flash Reminiscence | ||
| 238L | 176L | |
| Layers | 238 | 176 |
| Decks | 2 (x119) | 2 (x88) |
| Die Capability | 512 Gbit | 512 Gbit |
| Die Measurement (mm2) | 35.58mm2 | ~47.4mm2 |
| Density (Gbit/mm2) | ~14.39 | 10.8 |
| I/O Pace | 2.4 GT/s (ONFi 5.0) |
1.6 GT/s (ONFI 4.2) |
| CuA / PuC | Sure | Sure |
SK Hynix is the third main maker of NAND flash reminiscence to begin manufacturing of 3D NAND with over 200 layers. SK Hynix mentioned that one of many giant smartphone makers was about to finish compatibility assessments with its 238-layer 3D NAND gadgets. As soon as it does, SK Hynix will begin transport these reminiscence chips to the handset producer. Finally, these gadgets can be used for PCIe 5.0 SSDs and high-capacity server drives, the corporate mentioned.
“SK Hynix has developed resolution merchandise for smartphones and shopper SSDs that are used as PC storage gadgets, adopting the 238-layer NAND know-how, and has moved into mass manufacturing in Could,” a press release by SK Hynix reads. “Provided that the corporate secured world-class competitiveness in worth, efficiency, and high quality for each 238-layer NAND and the earlier technology 176-layer NAND, we anticipate these merchandise to drive earnings enchancment within the second half of the 12 months.”
